PMV65UN 20 v, single n-channel trench mosfet 13 november 2012 product data sheet 1. product profile 1.1 general description n-channel enhancement mode field-effect transistor (fet) in a small sot23 (to-236ab) surface-mounted device (smd) plastic package using trench mosfet technology. 1.2 features and benefits ? low threshold voltage ? very fast switching ? trench mosfet technology 1.3 applications ? relay driver ? high-speed line driver ? low-side loadswitch ? switching circuits 1.4 quick reference data table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage - - 20 v v gs gate-source voltage t amb = 25 c -8 - 8 v i d drain current v gs = 4.5 v; t amb = 25 c; t 5 s [1] - - 2.2 a static characteristics r dson drain-source on-state resistance v gs = 4.5 v; i d = 2 a; t j = 25 c - 64 76 m [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . product specification sales@twtysemi.com 1 of 4 http://www.twtysemi.com
PMV65UN 20 v, single n-channel trench mosfet 2. pinning information table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate 2 s source 3 d drain 1 2 3 to-236ab (sot23) s d g 017aaa253 3. ordering information table 3. ordering information package type number name description version PMV65UN to-236ab plastic surface-mounted package; 3 leads sot23 4. marking table 4. marking codes type number marking code [1] PMV65UN ed% [1] % = placeholder for manufacturing site code 5. limiting values table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 20 v v gs gate-source voltage t amb = 25 c -8 8 v v gs = 4.5 v; t amb = 25 c; t 5 s [1] - 2.2 a v gs = 4.5 v; t amb = 25 c [1] - 2 a i d drain current v gs = 4.5 v; t amb = 100 c [1] - 1.3 a i dm peak drain current t amb = 25 c; single pulse; t p 10 s - 8 a [2] - 310 mw t amb = 25 c [1] - 455 mw p tot total power dissipation t sp = 25 c - 2170 mw product specification sales@twtysemi.com 2 of 4 http://www.twtysemi.com
PMV65UN 20 v, single n-channel trench mosfet symbol parameter conditions min max unit t j junction temperature -55 150 c t amb ambient temperature -55 150 c t stg storage temperature -65 150 c source-drain diode i s source current t amb = 25 c [1] - 0.7 a [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . [2] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. 6. thermal characteristics table 6. thermal characteristics symbol parameter conditions min typ max unit [1] - 350 402 k/w in free air [2] - 240 275 k/w r th(j-a) thermal resistance from junction to ambient in free air; t 5 s [2] - 195 225 k/w r th(j-sp) thermal resistance from junction to solder point - 50 58 k/w [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for drain 6 cm 2 . 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 250 a; v gs = 0 v; t j = 25 c 20 - - v v gsth gate-source threshold voltage i d = 250 a; v ds = v gs ; t j = 25 c 0.4 0.7 1 v i dss drain leakage current v ds = 20 v; v gs = 0 v; t amb = 25 c - - 1 a i gss gate leakage current v gs = 8 v; v ds = 0 v; t j = 25 c - - 100 na product specification sales@twtysemi.com 3 of 4 http://www.twtysemi.com
PMV65UN 20 v, single n-channel trench mosfet symbol parameter conditions min typ max unit v gs = -8 v; v ds = 0 v; t j = 25 c - - -100 na v gs = 4.5 v; i d = 2 a; t j = 25 c - 64 76 m v gs = 4.5 v; i d = 2 a; t j = 150 c - 94 111 m v gs = 2.5 v; i d = 1.7 a; t j = 25 c - 78 97 m r dson drain-source on-state resistance v gs = 1.8 v; i d = 0.8 a; t j = 25 c - 110 156 m g fs forward transconductance v ds = 10 v; i d = 2 a; t j = 25 c - 8.7 - s dynamic characteristics q g(tot) total gate charge - 2.6 3.9 nc q gs gate-source charge - 0.3 - nc q gd gate-drain charge v ds = 10 v; i d = 2 a; v gs = 4.5 v; t j = 25 c - 0.7 - nc c iss input capacitance - 183 - pf c oss output capacitance - 52 - pf c rss reverse transfer capacitance v ds = 10 v; f = 1 mhz; v gs = 0 v; t j = 25 c - 26 - pf t d(on) turn-on delay time - 6 - ns t r rise time - 18 - ns t d(off) turn-off delay time - 21 - ns t f fall time v ds = 10 v; i d = 2 a; v gs = 4.5 v; r g(ext) = 6 ; t j = 25 c - 12 - ns source-drain diode v sd source-drain voltage i s = 0.7 a; v gs = 0 v; t j = 25 c - 0.8 1.2 v product specification sales@twtysemi.com 4 of 4 http://www.twtysemi.com
|
